High-k Dielectric Material Market size is forecast to reach $XX billion by 2025, after growing at a CAGR of 6.28% during 2020-2025. The industry growth is expected to be driven by increased requirements for low thermal stable materials and intensive research and development in the field. It is a type of material that has high dielectric constant k and is primarily used in the manufacturing of semiconductors. Further, increases the overall demand over forecast period.
Report Coverage
The “High-k Dielectric Material Market – Forecast (2020-2025)”, by IndustryARC, covers an in-depth analysis of the following segments of the High-k Dielectric Material Industry.
Presence of alternatives
Alternative high-κ dielectrics to HfO2 and ZrO2 have been investigated recently for their potential use in Ge-based MOSFETs. Among these materials, Al2O3 and LaAlO3 have attracted much attention, because they can be deposited directly on Ge. These materials have been successfully integrated into Ge-based MOSFETs, with very promising electrical characteristics.
Market Landscape
Technology launches, acquisitions and R&D activities are key strategies adopted by players in the High-k Dielectric Material Market. In 2019, the market of High-k Dielectric Material has been consolidated by the top five players accounting for xx% of the share. Major players in the High-k Dielectric Material Market are Henkel Corporation, Master Bond, Inc., Protavic America, Inc., HITEK Electronic Materials Ltd., Applied Materials, Inc., Sigma-Aldrich Co. LLC., Dielectric Lab Inc., National Magnetics Group, Arkema Group, and Gelest, Inc., among others.
Report Coverage
The “High-k Dielectric Material Market – Forecast (2020-2025)”, by IndustryARC, covers an in-depth analysis of the following segments of the High-k Dielectric Material Industry.
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By Type: Titanium Dioxide, Tantalum Pentoxide, Cerium Dioxide, Aluminum Oxide, and Others.
By Application: Gate Dielectrics, Capacitor Dielectrics, Photo electrochemical Cells, Epitaxial Dielectrics, and Others.
By Geography: North America, South America, Europe, APAC, and RoW.
Key Takeaways
For and above 70 nm development nodes, high dielectric (k > 10) insulators are indispensable. Many dielectric materials have weak properties than other typical silicon oxides that are used as dielectric gate.
Low interface consistency and thermal stability with the silicone substrates consist of high k TM oxides. TM Silicates like HfSiOx are predicted to be substantially improved because of increased thermal stability.
Due to its large-scale application as semi-conductive, hafnium compounds are likely to lead to high dielectric market development. A significant number of business participants will certainly be able to see the growing demand for these goods present massive growth opportunities. An increase in demand is expected to fuel market growth for these products from the transistor sector.
However, the end use industries are being significantly affected due to the COVID-19 pandemic, as most of the countries have issued “stay at home guidance” i.e., lockdown. This factor is the market growth in current situation.
The global high-k dielectric materials market is expected to fuel demand for microelectronics. High-k dielectric substances, however, have lower properties as a gate dielectric material that is intended to restrict the demand growth in the forecasted timeframe than traditional silicone oxide.
By Type: Titanium Dioxide, Tantalum Pentoxide, Cerium Dioxide, Aluminum Oxide, and Others.
By Application: Gate Dielectrics, Capacitor Dielectrics, Photo electrochemical Cells, Epitaxial Dielectrics, and Others.
By Geography: North America, South America, Europe, APAC, and RoW.
Key Takeaways
For and above 70 nm development nodes, high dielectric (k > 10) insulators are indispensable. Many dielectric materials have weak properties than other typical silicon oxides that are used as dielectric gate.
Low interface consistency and thermal stability with the silicone substrates consist of high k TM oxides. TM Silicates like HfSiOx are predicted to be substantially improved because of increased thermal stability.
Due to its large-scale application as semi-conductive, hafnium compounds are likely to lead to high dielectric market development. A significant number of business participants will certainly be able to see the growing demand for these goods present massive growth opportunities. An increase in demand is expected to fuel market growth for these products from the transistor sector.
However, the end use industries are being significantly affected due to the COVID-19 pandemic, as most of the countries have issued “stay at home guidance” i.e., lockdown. This factor is the market growth in current situation.
The global high-k dielectric materials market is expected to fuel demand for microelectronics. High-k dielectric substances, however, have lower properties as a gate dielectric material that is intended to restrict the demand growth in the forecasted timeframe than traditional silicone oxide.
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Type - Segment Analysis
The Titanium dioxide segment has been High-k Dielectric Material primary market. Titanium dioxide (TiO2) will open multifaceted prospects for the use of this material in microelectronic devices. Titanium dioxide (TiO2) have increased steadily due to its common availability, chemical stability, nontoxicity, optical-electronic properties, low cost, and high photocatalytic properties. TiO2 crystallizes in several crystallographic polymorph phases. Among them the most popular are anatase and rutile. Anatase phase is mostly formed at low temperatures, while rutile is thermodynamically stable at higher temperatures over other types like Tantalum Pentoxide, Cerium Dioxide, and Aluminum Oxide.
Application - Segment Analysis
Capacitor Dielectrics sector has been the primary market for High-k Dielectric Material for many years at a CAGR of 4.12%. The driving force behind this activity is that reducing the channel length in transistors also requires a reduction of the gate oxide thickness to maintain the gate efficiency. Because capacitance is essentially the ratio of the dielectric constant to the gate insulator thickness, high- K dielectrics allow the gate oxide thickness to be increased (to limit leakage) while maintaining or even increasing the capacitance.
Geography - Segment Analysis
APAC dominated the High-k Dielectric Material Market share with more than 42.65%, followed by North America and Europe. Due to factors like excess demand for electronic goods in China and increasing outsourcing of electronic equipment to China, the region is expected to remain dominant over the forecast period. Growing demand for Brazilian, Russian, Indian and Chinese (BRIC) semiconductor devices is also expected to significantly boost the growth of global markets due to rising demand for low-cost, high portability and versatile end-use electronics goods.
Drivers – High-k Dielectric Material Market
Increasing demand
In the BRIC (Brazil Russia India China) economy, the growing demand for semiconductors is expected to drive growth in the industry. Increase demand for end-use electronic products with portability, low cost and high-end dielectric materials versatility could significantly stimulate market growth in high - k dielectric materials over the next few years.
Challenges – High-k Dielectric Material Market
Type - Segment Analysis
The Titanium dioxide segment has been High-k Dielectric Material primary market. Titanium dioxide (TiO2) will open multifaceted prospects for the use of this material in microelectronic devices. Titanium dioxide (TiO2) have increased steadily due to its common availability, chemical stability, nontoxicity, optical-electronic properties, low cost, and high photocatalytic properties. TiO2 crystallizes in several crystallographic polymorph phases. Among them the most popular are anatase and rutile. Anatase phase is mostly formed at low temperatures, while rutile is thermodynamically stable at higher temperatures over other types like Tantalum Pentoxide, Cerium Dioxide, and Aluminum Oxide.
Application - Segment Analysis
Capacitor Dielectrics sector has been the primary market for High-k Dielectric Material for many years at a CAGR of 4.12%. The driving force behind this activity is that reducing the channel length in transistors also requires a reduction of the gate oxide thickness to maintain the gate efficiency. Because capacitance is essentially the ratio of the dielectric constant to the gate insulator thickness, high- K dielectrics allow the gate oxide thickness to be increased (to limit leakage) while maintaining or even increasing the capacitance.
Geography - Segment Analysis
APAC dominated the High-k Dielectric Material Market share with more than 42.65%, followed by North America and Europe. Due to factors like excess demand for electronic goods in China and increasing outsourcing of electronic equipment to China, the region is expected to remain dominant over the forecast period. Growing demand for Brazilian, Russian, Indian and Chinese (BRIC) semiconductor devices is also expected to significantly boost the growth of global markets due to rising demand for low-cost, high portability and versatile end-use electronics goods.
Drivers – High-k Dielectric Material Market
Increasing demand
In the BRIC (Brazil Russia India China) economy, the growing demand for semiconductors is expected to drive growth in the industry. Increase demand for end-use electronic products with portability, low cost and high-end dielectric materials versatility could significantly stimulate market growth in high - k dielectric materials over the next few years.
Challenges – High-k Dielectric Material Market
Presence of alternatives
Alternative high-κ dielectrics to HfO2 and ZrO2 have been investigated recently for their potential use in Ge-based MOSFETs. Among these materials, Al2O3 and LaAlO3 have attracted much attention, because they can be deposited directly on Ge. These materials have been successfully integrated into Ge-based MOSFETs, with very promising electrical characteristics.
Market Landscape
Technology launches, acquisitions and R&D activities are key strategies adopted by players in the High-k Dielectric Material Market. In 2019, the market of High-k Dielectric Material has been consolidated by the top five players accounting for xx% of the share. Major players in the High-k Dielectric Material Market are Henkel Corporation, Master Bond, Inc., Protavic America, Inc., HITEK Electronic Materials Ltd., Applied Materials, Inc., Sigma-Aldrich Co. LLC., Dielectric Lab Inc., National Magnetics Group, Arkema Group, and Gelest, Inc., among others.
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